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 High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package Technical Data
HSDL-44XX IR Emitter Series HSDL-54xx IR Detector Series
Features
* Subminiature Flat Top and Dome Package Size - 2x2 mm * IR Emitter 875 nm TS AlGaAs Intensity - 17 mW/sr Speed - 40 ns * Wide Range of Drive Currents 500 A to 500 mA * IR Detector PIN Photodiode High Sensitivity Speed - 7.5 ns * Flexible Lead Configurations Surface Mount or Through Hole
Description
Flat Top Package The HSDL-4400 Series of flat top IR emitters use an untinted, nondiffused, truncated lens to provide a wide radiation pattern that is useful for short distance communication where alignment of the emitter and detector is not critical. The HSDL-5400 Series of flat top IR detectors uses the same truncated lens design as the HSDL-4400 Series of IR emitters with the added feature of a black tint that acts as an optical filter to reduce the effects of ambient light, such as sun, incandescent and fluorescent light from interfering with the IR signal. Dome Package The HSDL-4420 Series of dome IR emitters uses an untinted, nondiffused lens to provide a 24 degree viewing angle with high on-axis intensity. The HSDL-5420 Series of IR detectors uses the same lens design as the HSDL4420 IR emitter and optical filter used in the HSDL-5400 IR detector.
Applications
* Short Distance IR Links * IrDA Compatible * Small Handheld Devices Pagers Industrial Handhelds * Diffuse LANs * Wireless Audio
Lead Configuration All of these devices are made by encapsulating LED and PIN photodiode chips on axial lead frames to form molded epoxy subminiature packages. A variety of lead configurations is available and includes: surface mount gull wing, yoke lead, or Z-bend and through hole lead bends at 2.54 mm (0.100 inch) center spacing. Technology The subminiature solid state emitters utilize a highly optimized LED material, transparent substrate aluminum gallium arsenide, TS AlGaAs. This material has a very high radiant efficiency, capable of producing high light output over a wide range of drive currents and temperature.
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Device Selection Guide
IR Emitters Part Number HSDL-4400 HSDL-4420 Device Description[1] LED, Flat Top, 110 deg LED, Dome, 24 deg Device Outline Drawing A B
IR Detectors Part Number HSDL-5400 HSDL-5420 Device Description[1] PIN Photodiode, Flat Top, 110 deg PIN Photodiode, Dome, 28 deg Device Outline Drawing C D
Package Configuration Options
Option Code 011 021 031 1L1 1S1 No Option Package Configuration Description Gull Wing Lead, Tape and Reel[2] Surface Yoke Lead, Tape and Reel[2] Mount Lead Z-Bend, Tape and Reel[2] 2.54 mm (0.100 in) Long Leads; Thru Hole Center Lead Spacing 10.4 mm (0.410 in) Lead Short Leads; 3.7 mm (0.145 in) [3] Straight Leads Prototyping Package Outline Drawing E, J, M F, K, M G, L, M H I A, B, C, D
Notes: 1. IR Emitters have untinted, nondiffused lenses and IR Detectors have black tinted, nondiffused lenses. 2. Emitters and detectors are supplied in 12 mm embossed tape on 178 mm (7 inch) diameter reels, with 1500 units per reel. Minimum order quantity and order increment are in quantity of reels only. 3. Emitters and detectors are supplied in bulk form in bags of 50 units. 4. The HSDL-44XX and HSDL-54xx families are not designed to be used in medical devices with life support functions or in safety equipment (or similar applications where components failures would result in loss of life or physical harm), eg. in automotive, medical or airline industries.
3
Package Dimensions
(A) Flat Top Emitters
0.50 (0.020) REF. 1.14 (0.045) 1.40 (0.055) 1.91 (0.075) 2.41 (0.095) 0.76 (0.030) MAX. CATHODE CATHODE STRIPE NOTE 4 1.65 (0.065) DIA. 1.91 (0.075) 0.20 (0.008) MAX. 0.58 (0.023) 0.43 (0.017) 1.40 (0.055) 1.65 (0.065) NOTE 3 ANODE
11.68 (0.460) 10.67 (0.420) BOTH SIDES
0.46 (0.018) 0.56 (0.022)
2.08 (0.082) 2.34 (0.092)
0.18 (0.007) 0.23 (0.009)
1.91 (0.075) 2.16 (0.085)
0.25 (0.010) MAX.* NOTE 2
(B) Dome Emitters
0.76 (0.030) R. 0.89 (0.035)
0.94 (0.037) 1.24 (0.049)
0.18 (0.007) 0.23 (0.009)
2.92 (0.115) MAX.
2.03 (0.080) 1.78 (0.070)
2.08 (0.082) 2.34 (0.092)
CATHODE STRIPE NOTE 4
0.79 (0.031) 0.53 (0.021) 1.91 (0.075) 2.16 (0.085)
0.63 (0.025) 0.38 (0.015)
0.50 (0.020) REF. 11.68 (0.460) 10.67 (0.420) BOTH SIDES
NOTE 3 ANODE
CATHODE 1.65 (0.065) DIA. 1.91 (0.075) 0.20 (0.008) MAX.
0.46 (0.018) 0.56 (0.022)
0.25 (0.010) MAX.* NOTE 2
NOTES: 1. ALL DIMENSIONS ARE IN MILLIMETRES (INCHES). 2. PROTRUDING SUPPORT TAB IS CONNECTED TO ANODE LEAD. 3. LEAD POLARITY FOR THESE TS AlGaAs SUBMINIATURE LAMPS IS OPPOSITE TO THE LEAD POLARITY OF SUBMINIATURE LAMPS USING OTHER LED TECHNOLOGIES. 4. CATHODE STRIPE MARKING IS DARK BLUE.
4
(C) Flat Top Detectors
0.50 (0.020) REF. 1.14 (0.045) 1.40 (0.055) 1.91 (0.075) 2.41 (0.095) 0.76 (0.030) MAX. ANODE CATHODE STRIPE NOTE 3 1.65 (0.065) DIA. 1.91 (0.075) 0.20 (0.008) MAX. 0.58 (0.023) 0.43 (0.017) 1.40 (0.055) 1.65 (0.065) CATHODE 11.68 (0.460) 10.67 (0.420) BOTH SIDES
0.46 (0.018) 0.56 (0.022)
2.08 (0.082) 2.34 (0.092)
0.18 (0.007) 0.23 (0.009)
1.91 (0.075) 2.16 (0.085)
0.25 (0.010) MAX.* NOTE 2
(D) Dome Detectors
0.76 (0.030) R. 0.89 (0.035)
0.94 (0.037) 1.24 (0.049)
0.18 (0.007) 0.23 (0.009)
2.92 (0.115) MAX.
2.03 (0.080) 1.78 (0.070)
2.08 (0.082) 2.34 (0.092)
CATHODE STRIPE NOTE 3
0.79 (0.031) 0.53 (0.021) 1.91 (0.075) 2.16 (0.085)
0.63 (0.025) 0.38 (0.015)
0.50 (0.020) REF. CATHODE 11.68 (0.460) 10.67 (0.420) BOTH SIDES
ANODE 1.65 (0.065) DIA. 1.91 (0.075) 0.20 (0.008) MAX.
0.46 (0.018) 0.56 (0.022)
0.25 (0.010) MAX.* NOTE 2
NOTES: 1. ALL DIMENSIONS ARE IN MILLIMETRES (INCHES). 2. PROTRUDING SUPPORT TAB IS CONNECTED TO CATHODE LEAD. 3. CATHODE STRIPE MARKING IS DARK BLUE.
5
Package Dimensions
The following notes affect the package outline drawings E through I. 1. The pinout represents the HSDL-54xx IR detectors where the protruding support tab is closest to the anode lead. While the pinout is reversed for the HSDL-44XX IR emitters
where the protruding support tab is closest to the cathode lead. 2. The protruding support tab of the HSDL-54xx is connected to the cathode lead. While the protruding support tab of the HSDL-44XX is connected to the anode lead.
(E) Gull Wing Lead, Option 011
0.76 (0.030) MAX.
(F) "Yoke" Lead, Options 021
0.76 (0.030) MAX.
ALL DIMENSIONS ARE IN MILLIMETRES (INCHES)
6
(G) Z-Bend Lead, Options 031
0.76 (0.030) MAX.
(H) Thru Hole Lead Option 1L1
(I) Thru Hole Lead Option 1S1
7
Package Dimensions: Surface Mount Tape and Reel Options
(J) 12 mm Tape and Reel, Gull Wing Lead, Option 011
GULL WING LEAD SUBMINIATURE PACKAGE
NOTES: 1. EMPTY COMPONENT POCKETS SEALED WITH TOP COVER TAPE. 2. 7 INCH REEL - 1500 PIECES PER REEL. 3. MINIMUM LEADER LENGTH AT EITHER END OF THE TAPE IS 500 mm. 4. THE MAXIMUM NUMBER OF CONSECUTIVE MISSING DEVICES IS TWO. 5. IN ACCORDANCE WITH ANSI/EIA RS-481 SPECIFICATIONS, THE CATHODE IS ORIENTED TOWARDS THE TAPE SPROCKETS HOLE.
8
(K) 12 mm Tape and Reel, "Yoke" Lead, Option 021
"YOKE" LEAD SUBMINIATURE PACKAGE
9
(L) 12 mm Tape and Reel, Z-Bend Lead, Option 031
Z-BEND LEAD SUBMINIATURE PACKAGE
10
(M) 12 mm Tape and Reel
11
HSDL-44XX Absolute Maximum Ratings
Parameter Peak Forward Current (Duty Factor = 20%, Pulse Width = 100 s) DC Forward Current Power Dissipation Reverse Voltage (IR = 100 A) Transient Forward Current (10 s Pulse) Operating Temperature Storage Temperature Junction Temperature Lead Solder Temperature [1.6 mm (0.063 in.) from body] Reflow Soldering Temperatures Convection IR Vapor Phase Symbol IFPK IFDC PDISS VR IFTR TO TS TJ 5 -40 -55 1.0 85 100 110 260/5 s Min. Max. 500 100 100 Unit mA mA mW V A C C C C Ref. Fig. 7, 8 Fig. 6
[1]
235/90 s 215/180 s
C C
Fig. 20
Note: 1. The transient peak current in the maximum nonrecurring peak current the device can withstand without damaging the LED die and the wire bonds.
HSDL-44XX Electrical Characteristics at TA = 25C
Parameter Forward Voltage Forward Voltage Temperature Coefficient Series Resistance Diode Capacitance Reverse Voltage Thermal Resistance, Junction to Pin Symbol VF VF/T RS CO VR Rjp 5 Min. 1.30 Typ. 1.50 2.15 -2.1 -2.1 2 50 20 170 Max. 1.70 Unit V mV/C pF V C/W Condition IFDC = 50 mA IFPK = 250 mA IFDC = 50 mA IFDC = 100 mA IFDC = 100 mA 0 V, 1 MHz IR = 100 A Ref. Fig. 2 Fig. 3
12
HSDL-44XX Optical Characteristics at TA = 25C
Parameter Radiant On-Axis Intensity HSDL-4400 IE 1 3 6 15 17 32 85 -0.35 -0.35 110 24 850 875 0.25 37 40 9 900 8 mW/sr IFDC = 50 mA IFDC = 100 mA IFPK = 250 mA IFDC = 50 mA IFDC = 100 mA IFPK = 250 mA IFDC = 50 mA IFDC = 100 mA IFDC = 50 mA IFDC = 50 mA IFDC = 50 mA IFDC = 50 mA IFDC = 50 mA IFPK = 50 mA IFDC = 50 mA 10 mA Fig. 11 Fig. 1 Fig. 9 Fig. 10 Fig. 1 Fig. 4, 5 Symbol Min. Typ. Max. Unit Condition Ref.
HSDL-4420
IE
9
30
mW/sr
Fig. 4, 5
Radiant On-Axis Intensity Temperature Coefficient Viewing Angle HSDL-4400 HSDL-4420 Peak Wavelength Peak Wavelength Temperature Coefficient Spectral Width at FWHM Optical Rise and Fall Times, 10%-90% Bandwidth
IE /T
%/C
21/2 21/2 PK /T tr/tf fc
deg deg nm nm/ C nm ns MHz
13
HSDL-54xx Absolute Maximum Ratings
Parameter Power Dissipation Reverse Voltage (IR = 100 A) Operating Temperature Storage Temperature Junction Temperature Lead Solder Temperature [1.6 mm (0.063 in.) from body] Reflow Soldering Temperatures Convection IR Vapor Phase Symbol PDISS VR TO TS TJ Min. Max. 150 40 85 100 110 260/5 s 235/90 s 215/180 s Unit mW V C C C C C C
-40 -55
HSDL-54xx Electrical Characteristics at TA = 25C
Parameter Forward Voltage Breakdown Voltage Reverse Dark Current Series Resistance Diode Capacitance Symbol VF VBR ID RS CO 1 2000 5 Min. Typ. 0.8 40 5 Max. Unit V V nA pF Condition IFDC = 1 mA IR = 100 A, Ee = 0 mW/cm2 VR = 5 V, Ee = 0 mW/cm2 VR = 5 V, Ee = 0 mW/cm2 VR = 0 V, Ee = 0 mW/cm2 f = 1 MHz Ee = 1 mW/cm2 PK = 875 nm Ee = 1 mW/cm2 PK = 875 nm Ee = 1 mW/cm2 PK = 875 nm Ee = 1 mW/cm2 PK = 875 nm Fig. 16 Fig. 12 Ref.
Open Circuit Voltage
VOC
375 -2.2
mV mV/K
Temperature Coefficient of VOC VOC/T Short Circuit Current HSDL-5400 HSDL-5420 Temperature Coefficient of ISC Thermal Resistance, Junction to Pin ISC/T Rjp ISC
1.6 4.3 0.16 170
A A %/K C/W
14
HSDL-54xx Optical Characteristics at TA = 25C
Parameter Photocurrent HSDL-5400 HSDL-5420 Temperature Coefficient of IPH Radiant Sensitive Area Absolute Spectral Sensitivity Symbol IPH IPH/T Min. 0.8 3.0 Typ. 1.6 6.0 0.1 Max. Unit A %/K Condition Ee = 1 mW/cm2 PK = 875 nm VR = 5 V Ee = 1 mW/cm2 PK = 875 nm VR = 5 V Ee = 1 mW/cm2 PK = 875 nm VR = 5 V Fig. 18 Fig. 19 Fig. 17 Fig. 17 Ref. Fig. 14, 15 Fig. 13
A S
0.15 0.5
mm2 A/W
Viewing Angle HSDL-5400 HSDL-5420 Wavelength of Peak Sensitivity Spectral Bandwidth Quantum Efficiency
21/2 PK
110 28 875 7701000 70
deg nm nm % Ee = 1 mW/cm2 VR = 5 V Ee = 1 mW/cm2 VR = 5 V Ee = 1 mW/cm2 PK = 875 nm, VR = 5 V VR = 5 V PK = 875 nm VR = 5 V PK = 875 nm VR = 5 V RL = 1 k PK = 875 nm VR = 5 V RL = 1 k PK = 875 nm
Noise Equivalent Power Detectivity Optical Rise and Fall Times, 10%-90% Bandwidth
NEP D tr /tf
6.2 x 10-15 6.3 x 1012 7.5
W/Hz1/2 cm* Hz1/2/W ns
fc
50
MHz
15
IFPK - PEAK FORWARD CURRENT - mA
1.5
1,000
2.0
VF - FORWARD VOLTAGE - V
RELATIVE RADIANT INTENSITY
TA = 25 C IFDC = 50 mA 1.0
1.8
100
TA = 25 C
IFDC = 100 mA IFDC = 50 mA
1.6
1.4
0.5
10
1.2 1.0 -20
IFDC = 1 mA 0 20 40 60 80
0 800
850
900
950
1 0
0.5
1.0
1.5
2.0
2.5
3.0
- WAVELENGTH - nm
VF - FORWARD VOLTAGE - V
TA - AMBIENT TEMPERATURE - C
Figure 1. Relative Radiant Intensity vs. Wavelength.
Figure 2. Peak Forward Current vs. Forward Voltage.
Figure 3. Forward Voltage vs Ambient Temperature.
IFDC - MAXIMUM DC FORWARD CURRENT - mA
5.00 4.50 4.00 3.50 3.00 2.50 2.00 1.50 1.00 0.50 0 0 100 200 300 400 500 IFPK - PEAK FORWARD CURRENT - mA PULSE WIDTHS < 100 s TA = 25C
NORMALIZED RADIANT INTENSITY
NORMALIZED RADIANT INTENSITY
1.00
120 100 Rja = 220 C/W 80 60 40 20 0 -40 Rja = 270 C/W Rja = 370 C/W
TA = 25C
0.10
0.01 0.1
1 IFPK - FORWARD CURRENT - mA
10
-20
0
20
40
60
80
100
TA - AMBIENT TEMPERATURE - C
Figure 4. Normalized Radiant Intensity vs. Peak Forward Current.
Figure 5. Normalized Radiant Intensity vs. Peak Forward Current (0 to 10 mA).
Figure 6. Maximum DC Forward Current vs. Ambient Temperature. Derated Based on TJMAX = 110C.
IFPK - PEAK FORWARD CURRENT - mA
IFPK - PEAK FORWARD CURRENT - mA
500 DUTY FACTOR 7% 10 % 20 % 50 %
600 500 400 300 200 50 % 100 PULSE WIDTHS < 100 s 0 -40 -20 0 20 40 60 80 100 DUTY FACTOR 10 % 20 % 50 % 10 % 20 %
400
300
200
100
0 0.01
0.1
1
10
tPW - PULSE WIDTH - ms
TA - AMBIENT TEMPERATURE - C
Figure 7. Maximum Peak Forward Current vs. Duty Factor.
Figure 8. Maximum Peak Forward Current vs. Ambient Temperature. Derated Based on T JMAX = 110C.
16
1.0
RELATIVE RADIANT INTENSITY
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -100 -80 -60 -40 -20 0 20 40
IF = 50 mA TA = 25C
60
80
100
- ANGLE FROM OPTICAL CENTERLINE - DEGREES (CONE HALF ANGLE)
Figure 9. Relative Radiant Intensity vs. Angular Displacement HSDL-4400.
1.0
RELATIVE RADIANT INTENSITY
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -50 -40 -30 -20 -10 0 10 20 30 40 50 IF = 50 mA TA = 25C
- ANGLE FROM OPTICAL CENTERLINE - DEGREES (CONE HALF ANGLE)
Figure 10. Relative Radiant Intensity vs. Angular Displacement HSDL-4420.
TA = 25C
NORMALIZED PHOTOCURRENT
1 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 1E+5
ID - REVERSE DARK CURRENT - nA
2
RELATIVE RADIANT INTENSITY
10.000
1.40 1.30 1.20 1.10 1.00 0.90 0.80 0.70 0.60 -40 -20 0 20 40 60 80 100 VR = 5 V
1.000
VR = 5 V
9 MHz
0.100
0.010
1E+6
1E+7
1E+8
0.001 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE - C
f - FREQUENCY - Hz
TA - AMBIENT TEMPERATURE - C
Figure 11. Relative Radiant Intensity vs. Frequency.
Figure 12. Reverse Dark Current vs. Ambient Temperature.
Figure 13. Relative Reverse Light Current vs. Ambient Temperature.
17
10
NORMALIZED PHOTOCURRENT
1.40 VR = 5 V TA = 25C
NORMALIZED PHOTOCURRENT
1.30 TA = 25C 1.20 1.10 1.00 0.90 0.80 0.70 0.60 0 5 10 15 20 25 30 35 40
1
0.1
0.01 0.01
0.1
1
10
Ee - IRRADIANCE - mW/cm2
VR - REVERSE VOLTAGE - V
Figure 14. Reverse Light Current vs. Irradiance
Figure 15. Reverse Light Current vs. Reverse Voltage.
5
CO - DIODE CAPACITANCE - pF
1.2
NORMALIZED PHOTOCURRENT
4
Ee = 0 mW/cm2 f = 1 MHz TA = 25C
1.0 0.8 0.6 0.4 0.2
VR = 5 V TA = 25C
3
2
1 0 0.1
1
10
100
0 700 750 800 850 900 950 1000 1050 1100 - WAVELENGTH - nm
VR - REVERSE VOLTAGE - V
Figure 16. Diode Capacitance vs. Reverse Voltage.
Figure 17. Relative Spectral Sensitivity vs. Wavelength.
At the time of this publication, Light Emitting Diodes (LEDs) that are contained in this product are regulated for eye safety in Europe by the Commission for European Electrotechnical Standardization (CENELEC) EN60825-1. Please refer to Application Brief I-008 for more information.
18
1.0
NORMALIZED PHOTOCURRENT
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -100 -80 -60 -40 -20 0 20 40
VR = 5 V TA = 25C
60
80
100
- ANGLE FROM OPTICAL CENTERLINE - DEGREES (CONE HALF ANGLE)
Figure 18. Relative Radiant Intensity vs. Angular Displacement. HSDL-5400.
1.0
NORMALIZED PHOTOCURRENT
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -50 -40 -30 -20 -10 0 10 20 30 40 50
- ANGLE FROM OPTICAL CENTERLINE - DEGREES (CONE HALF ANGLE)
Figure 19. Relative Radiant Intensity vs. Angular Displacement. HSDL-5420.
250 NORMAL COQ 200
TEMPERATURE (C)
150 EVALUATION 100
50
0
0
50
100
150
200 TIME (s)
250
300
350
400
Figure 20. Evaluation Soldering Profiles (Polyled). Ramp Up Rate (25C - 125C) Peak Temperature Temperature Maintained Above 183C Ramp Down Rate (170 C - 50 C) = 2 to 3C/s = 230 5C for 10 s = 60 s to 150 s = 3 to 4C/s
www.agilent.com/semiconductors
For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (408) 654-8675 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (+65) 271 2451 India, Australia, New Zealand: (+65) 271 2394 Japan: (+81 3) 3335-8152(Domestic/International), or 0120-61-1280(Domestic Only) Korea: (+65) 271 2194 Malaysia, Singapore: (+65) 271 2054 Taiwan: (+65) 271 2654 Data subject to change. Copyright (c) 2002 Agilent Technologies, Inc. Obsoletes 5988-2425EN January 17, 2002 5988-5284EN


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